Stackpole Releases AlN High‑Power Thick Film Chip Resistors

Stackpole Electronics has introduced the RMAN series of thick film chip resistors built on aluminum nitride (AlN) substrates, targeting designs that are power‑limited by heat rather than footprint.

The use of AlN significantly improves thermal conductivity compared to conventional alumina, enabling higher power density in familiar 1206 and 2512 sizes for power electronics, industrial and other thermally demanding applications.

Key features and benefits

The RMAN series is a thick film high power chip resistor family using aluminum nitride substrate technology instead of standard alumina. This substrate change is aimed at overcoming the thermal bottleneck that typically limits power ratings in conventional thick film chip resistors.

The central technical differentiator of the RMAN series is the use of aluminum nitride substrate instead of alumina. Aluminum nitride offers much higher thermal conductivity, which improves heat spreading from the resistive element to the terminations and into the PCB or heatsinking structure.

Key features include:

Practical benefits for design engineers:

Typical applications

The RMAN series is suitable wherever surface‑mount resistors are operating near their thermal limits and conventional alumina‑based chips are constraining power density. Typical use cases include:

Because the series is based on thick film technology, it can serve in many of the same roles as conventional high‑power chip resistors, but with an emphasis on applications where the thermal path to the PCB and ambient is a limiting factor.

Source

This article is based on an official press release by Stackpole Electronics announcing the RMAN thick film high power aluminum nitride substrate chip resistor series.

References

  1. Stackpole Electronics – RMAN thick film high power aluminum nitride substrate chip resistors press release (PDF)
  2. Stackpole Electronics – official website
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