Samsung Unveils World First CLLC Resonant 1kV 33nF C0G MLCC in 1210 Size

Samsung Electro-Mechanics has introduced the world’s first CLLC resonant multilayer ceramic capacitor (MLCC) in a compact 1210 (3.2 × 2.5 mm) package, offering 33 nF at 1000 V with a C0G dielectric tailored for xEV CLLC resonant converters.

This MLCC CL32C333JIV1PN#  targets on-board charger and high-voltage charging architectures in BEV and PHEV platforms where high stability, low loss, and miniaturization are critical.

Product overview

The new part, CL32C333JIV1PN, is a temperature-compensating high-voltage MLCC designed for xEV applications such as battery electric vehicles (BEV) and plug-in hybrid electric vehicles (PHEV). It combines a 33 nF capacitance with a 1000 V rated voltage in a standard 1210 case size using a C0G dielectric with a temperature range of −55 °C to 125 °C.

Mass production of this MLCC has already started, enabling automotive customers to immediately integrate it into next-generation resonant converter designs. The C0G characteristic ensures an ultra-stable capacitance change of 0 ± 30 ppm/°C across the specified temperature range, which is essential for predictable resonant behavior.

Role in CLLC resonant converters

Electrification of vehicles and increased functional integration are driving a sharp rise in the number of MLCCs per vehicle, especially in high-voltage power stages such as CLLC resonant circuits used in onboard chargers. In these resonant stages, capacitors must provide precise and stable capacitance under high voltage and temperature to maintain the designed resonant frequency and efficiency.

The CL32C333JIV1PN targets exactly these requirements by combining high voltage capability with low capacitance drift and low dielectric losses, supporting high power density designs without sacrificing EMI performance or reliability. Its compact 1210 footprint helps reduce PCB area versus traditional film or larger ceramic solutions at similar voltage ratings.

Key technologies and performance

Samsung Electro-Mechanics achieves the 33 nF, 1000 V performance in 1210 size by applying proprietary fine-particle ceramic and electrode materials, together with ultra-precision stacking processes. These process innovations enable higher layer counts and thinner dielectric layers while maintaining the robustness required for automotive environments.

The use of a C0G dielectric guarantees near-zero capacitance variation over temperature and very low voltage dependence, which minimizes frequency drift in resonant tanks and supports tight control margins in digital power stages. This stability simplifies design margins and can reduce the need for overdesign in surrounding magnetics and control algorithms.

Expanded high-voltage C0G lineup

Alongside the 33 nF / 1000 V flagship, Samsung Electro-Mechanics offers additional 1210 C0G high-voltage MLCC variants to cover a broader design space. These include a 10 nF device rated at 1250 V (CL32C103JXV3PN) and a 22 nF device rated at 1000 V (CL32C223JIV3PN), both in the same 3.2 × 2.5 mm package.

This lineup allows designers to optimize resonant capacitors for different power levels and bus voltages while keeping footprint and dielectric characteristics consistent across the platform. For all three parts, detailed datasheets and technical support are available, including sample services for evaluation and design-in.

Typical applications

Samsung Electro-Mechanics supports automotive customers with professional technical assistance and sample provisioning through regional contacts in the USA, Europe, and Southeast Asia, helping accelerate design cycles and qualification efforts.

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