TDK Releases Compact SMD Gate Drive Transformers for xEV

The new E13 EM surface‑mount transformer series from TDK targets 500 V automotive battery systems with compact footprints, automotive qualification and insulation systems aligned with relevant IEC standards, making them interesting for both traction and auxiliary power designs.

Gate drive transformers are a key building block in high‑voltage xEV traction inverters and isolated DC‑DC converters, where they provide galvanic isolation for IGBT/MOSFET drivers and auxiliary power stages.

Key features and benefits

Typical applications

The E13 EM series is targeted at isolated power conversion and gate drive tasks in electrified vehicles and related systems.

In practice, these transformers fit into gate driver stages between the control ASIC/MCU and the high‑side or low‑side switches, as well as in small isolated supplies distributed across an xEV power electronics stack.

Technical highlights

Insulation and standards

The insulation system is central to high‑voltage automotive qualification and compliance:

For design engineers, this means the E13 EM series can form part of the isolation barrier without extensive additional spacing or custom mechanical structures, provided PCB design maintains equivalent creepage and clearance.

Electrical parameters and operating range

From the key data, the following technical highlights can be extracted:

The use of MnZn ferrite cores supports low loss at the given switching frequencies, while the SMD package balances electrical performance with automated assembly.

Mechanical and environmental characteristics

These mechanical and environmental characteristics make the E13 EM series suitable for designs where board space is limited and temperature extremes are expected.

Selected variants and key parameters

The press release lists several ordering codes covering both flyback and push‑pull topologies. The following table summarizes the key relationships between topology, turns ratio, inductance and saturation current according to manufacturer data.

Ordering codeTopologyTurns ratio (N)Inductance LN1 (µH)Saturation current ISAT (A)Frequency range (kHz)
B82802F0007A213Flyback1:1:0.5 (N1+N2:N3:N4)30 ±10% (N1+N2)2100 – 400
B82802F0004A213Flyback1:2:2 (N1:N2:N3)14.4 ±15%1.6according to datasheet
B82802F0005A113Flyback1:1 (N1:N2)1.8 ±10%9according to datasheet
B82804F0503A200Push‑pull1:3.78:1.55 (N1:N2:N3)≥ 50according to datasheetaccording to datasheet
B82804F0114A200Push‑pull1:1:1.5:1.5 (N1:N2:N3:N4)≥ 110according to datasheetaccording to datasheet
B82804F0244A210Push‑pull1:1:1 (N1:N2:N3)≥ 240according to datasheetaccording to datasheet

For detailed winding data, exact inductance distribution per winding and full frequency derating, designers should consult the corresponding transformer datasheet pages.

Design‑in notes for engineers

As a practical example, in a 500 V battery traction inverter using isolated gate drivers, a designer could choose a 1:1 gate drive transformer variant with sufficient ISAT to deliver short high‑current gate pulses, place it between the driver IC and the IGBT module, and rely on the integrated insulation system to meet standards without significantly increasing board area.

Source

This article is based on technical information provided in the TDK Electronics press release on the E13 EM series of SMD gate drive transformers and associated official product documentation from the manufacturer.

References

  1. TDK introduces compact SMD components for gate drivers and isolated DC-DC converters in xEVs – press release
  2. TDK Transformers for IGBT/FET – product catalog overview
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