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    Sumida Announces New DC Common Mode Choke Coil Series

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TDK Releases Compact 500V Gate Driver Transformer

7.3.2025
Reading Time: 3 mins read
A A

TDK Corporation releases the EPCOS EP9 series 500V Gate Driver Transformer, which is more compact than the existing E10EM series of surface-mount transformers designed specifically for IGBT and FET gate driver circuits.

Engineered for high performance in demanding e-mobility and industrial applications with 500 V system voltage, these components offer exceptional insulation, minimal coupling capacitance, and high thermal resilience.

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With this new series, TDK is driving the green transformation towards a more electric and sustainable future.

The EP9 series is built on a MnZn ferrite core with SMD L-pin construction, delivering a height of just 11 mm and a footprint of 13 x 11 mm. These transformers operate across a wide temperature range of −40 °C to +150 °C, ensuring durability under harsh conditions.

With a coupling capacitance of only 2 pF, complying with the AEC-Q200 Rev. E standard, and creepage and clearance of at least 5 mm, these surface-mount components are generally used in automotive applications and other demanding environments.

The transformers support topologies such as half-bridge and push-pull converters with typical operational frequency of 100 to 400 kHz and turns ratios optimized for specific applications. These components are available in tape-and-reel packaging, ensuring ease of assembly for high-volume production environments.

A sample kit is available under order number B82804X1, containing six transformers of each version.

Features

  • Dimensions: 13 x 11 x 11 mm (L x W x H)
  • Wide temperature range: −40 °C up to +150 °C
  • Very low coupling capacity: 2 pF
  • Insulation characteristics: creepage and clearance ≥5 mm [cumulative, core floating]
  • Qualified to AEC-Q200 Rev. E

Applications

  • IGBT/MOSFET gate driver transformers for inverter systems
  • Auxiliary transformers for DC-DC converters
Ordering codeTopologiesTurns ratio
N1 / N2, N3
LN1 (typ.)
[µH]
Lleak,N1 (typ.)
[µH]
E*dtN1 (max.) [µVs]
(unipolar/bipolar)
B82804E0164A200Half bridge1 : 2.8 : 1.53260 520 / 40
B82804E0473A200Push-pull1 : 2.9 : 147 1.715 / 30
Specifications

Related

Source: TDK

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