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    Bourns Unveils Metal Powder Core High Current Low DCR Shielded Power Inductor

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    Ripple Steering in Coupled Inductors: SEPIC Case

    SEPIC Converter with Coupled and Uncoupled Inductors

    Coupled Inductors in SEPIC versus Flyback Converters

    Non-Linear MLCC Class II Capacitor Measurements Challenges

    Percolation Phenomenon and Reliability of Molded Power Inductors in DC/DC converters

    Root Causes and Effects of DC Bias and AC in Ceramic Capacitors

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    Bourns Unveils Metal Powder Core High Current Low DCR Shielded Power Inductor

    Influence of Tantalum Capacitor Pellets Size on Stability During Oxide Film Formation

    Modelithics Release Discrete Components Optimization Article for RF/Microwave Designers

    Samsung Extends Capacitance of MLCC 0805 X7T 250V to 100nF

    Samtec Releases 800-Position High-Performance Array Connectors  

    DigiKey Announces Back to School Giveaway to Empower Tomorrow’s Innovators

    Ripple Steering in Coupled Inductors: SEPIC Case

    TDK Releases Low Loss Thin-Film Inductors for AI Data Centers

    Samsung Releases Ultra–High-Capacitance 4.7uF 2.5V MLCC in 0201 for AI GPU

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    Ripple Steering in Coupled Inductors: SEPIC Case

    SEPIC Converter with Coupled and Uncoupled Inductors

    Coupled Inductors in SEPIC versus Flyback Converters

    Non-Linear MLCC Class II Capacitor Measurements Challenges

    Percolation Phenomenon and Reliability of Molded Power Inductors in DC/DC converters

    Root Causes and Effects of DC Bias and AC in Ceramic Capacitors

    How to Calculate the Output Capacitor for a Switching Power Supply

    Switched Capacitor Converter Explained

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GaN based 300W Ultra High Power Density Adapter; EMC and Filter Design Considerations; Würth Elektronik Webinar with ON Semiconductor

22.3.2021
Reading Time: 1 min read
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The presented 300 W Ultra−high Power Density Adapter (UHPD) evaluation board demonstrates ON Semiconductor’s high performance controllers, drivers and discrete semiconductor content capabilities that enable efficient UHPD designs implementation. This reference design includes the Synchronous PFC boost converter which is operating in the Discontinuous Conduction or Critical Conduction Mode (DCM/ CrM) depends on loading and LLC power stage with secondary side synchronous rectification.

The PFC front stage is driven by NCP1616 controller, which assures unity power factor and low input current THD. Synchronization of the PFC boost SR switch is secured by the NCP4306 high performance SR controller. The LLC stage operates at 500 kHz switching frequency while nominal load is applied. Power stage is managed by the NCP13992 high performance current mode LLC controller. Thanks to the GaN High Electron Mobility Transistors (HEMT) implemented in both power stages at primary side, the high efficiency is easily maintained despite that system operates at high frequency.

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GaN Systems’ GS66504B are incorporated as primary side power switches. Synchronous rectifier (SR) stage used in the secondary side composes from NCP4306 and two paralleled 60V power MOSFETs for each branch. SR MOSFETs and controllers are implemented on the dedicated SR MODULE daughter card to ease main power board PCB design and to achieve maximum efficiency.

Ultra−high power density is achieved thanks to the modular design, used controllers/ drivers, GaN HEMT and dedicated power magnetics design: the main filter chokes of the board have been specifically designed in collaboration with Würth Elektronik.

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Source: Würth Elektronik

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