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    Improving SMPS Performance with Thermal Interface Material

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    Efficient Power Converters: Duty Cycle vs Conduction Losses

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    Improving SMPS Performance with Thermal Interface Material

    Polymer Tantalum Capacitors Beyond AEC-Q200 LEO Satellites

    Components Thermal and Frequency Challenges in 6G Base Stations

    Development of Nitrogen-Doped Graphene Supercapacitors 

    Layer-by-Layer Fabrication of Thin Polypropylene-based Dielectrics

    Kyocera Launches New SAW Filter for GNSS 1.6GHz Satellite Communications

    Reliability of E-Textile Conductive Paths and Passive Component Interfaces

    Flaked Tantalum Powders: High Capacitance Powders for High Reliable Tantalum Capacitors

    Efficient Power Converters: Duty Cycle vs Conduction Losses

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    Efficient Power Converters: Duty Cycle vs Conduction Losses

    Ripple Steering in Coupled Inductors: SEPIC Case

    SEPIC Converter with Coupled and Uncoupled Inductors

    Coupled Inductors in SEPIC versus Flyback Converters

    Non-Linear MLCC Class II Capacitor Measurements Challenges

    Percolation Phenomenon and Reliability of Molded Power Inductors in DC/DC converters

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TDK Extends SMT Gate Drive Transformers to 1000 V

20.8.2025
Reading Time: 3 mins read
A A

TDK Corporation has significantly extended its EPCOS InsuGate series of SMT gate drive transformers, introducing new variants rated for a DC working voltage of up to 1000 V (ordering code: B78541A25).

These components meet the IEC 61558-1/2-16 standard for basic insulation and enable more compact gate driver designs for full-bridge inverter modules, particularly in demanding e-mobility and industrial environments.

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TDK Releases Industry-Leading 22nF 1000V C0G MLCCs in the 3225 Case

The triple-insulated winding structure, combined with a MnZn ferrite core and optimized coil architecture, allows for robust isolation in high-switching-frequency applications without compromising board space or reliability.

With a footprint of just 13.85 x 10.5 x 9.2 mm (L x W x H), the new 1 kV-rated components reduce PCB floor space requirements by approximately 30% compared to traditional single gate drive transformer designs supporting equivalent insulation.

They offer a flat inductance profile up to +150 °C, with a nominal inductance of 75 µH and a coupling capacitance of only 4 pF, making them a good choice for fast-switching IGBT and SiC devices. SPICE models are available upon request.

The series is qualified to AEC-Q200 Rev. E and has undergone extended mechanical vibration testing in line with AQG 324 requirements based on standard Eurocard PCB, proving its resilience in powertrain-mounted modules. With a partial discharge extinction voltage of ≥1.2 kV (Vpeak), reinforced insulation voltage capability of 300 V (AC), and high voltage test performance at 3 kV (AC) for 60 seconds, these new transformers offer a reliable solution for galvanic isolation in next-generation power electronics.

Features

  • DC working voltage up to 1000 V
  • Small SMT package 13.85 x 10.5 x 9.2 mm (L x W x H)
  • Flat L vs. temperature curve
  • Coupling capacity 4 pF (typ.)
  • Partial discharge capability
  • RoHS compatible
  • Qualified to AEC-Q200 Rev. E
  • Vibration resistant acc. to AQG 324 on standard Eurocard PCB
  • Wide temperature range up to +150 °C

Applications

  • Switch-mode power supplies
  • Gate driver circuits
  • Isolated DC-DC converters
  • Galvanically isolated single-channel IGBT/SiC driver ICs

Related

Source: TDK

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