Source: UMS news and Compound Semiconductor news
UMS is proud to announce that the GH25-10 MMIC GaN HEMT technology is successfully space evaluated and now part of the European Preferred Part list (EPPL) established by the European Space agency (ESA)
United Monolithic Semiconductors (UMS), a European specialist focused on RF, microwave and millimetre wave devices, has announced that its GH25-10 MMIC GaN HEMT technology has been successfully space evaluated. It is now part of the European Preferred Part list (EPPL) supported by the European Space agency (ESA).
This GaN 0.25μm HEMT process is optimised for high power applications up to 20GHz. It also provides a good HEMT noise performance also enabling LNA design.
The MMIC process includes, precision TaN resistors, high value TiWSi resistors, MIM capacitors, inductors, air-bridges, via-holes through the substrate and two metal layers for interconnection.
The reliability study and evaluation of the technology have been supported by ESA, CNES and French MoD (DGA) and CNES.
Typical value:
- Power density: 4.5W/mm
- Vt: -3.5V
- Idss: 0.86A/mm,
- Ids+: 1A/mm
- Gm: 290mS/mm.
- Vbds: >100 Volts
- VdsDC: 30V
- Ft: 30GHz
- Fmax: Above 50GHz
- MIM density: 255pF/mm2
- Metallic resistors: 30 and 1000 Ohms/sq.
- Via-holes: Available on 100µm substrate thickness.
- Wafer size thickness: 100µm
- Diameter: 100mm
For your foundry projects, GH25 Design Kits are available on ADS from Keysight and MwO from NI-AWR. They offer non linear scalable electro-thermal models and a 3D stack for EM simulation & DRC capability.
(1) European Space Agency / European Space Components Information Exchange System – EPPL list: https://escies.org/download/webDocumentFile?id=65824
featured image source: UMS
