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    Power line EMI filter on a copper ground-plane fixture connected to a vector network analyzer with a toroidal balun

    How to Measure Filter Performance: Insertion Loss, VNA Fixtures and CM/DM Separation

    Assorted EMI and RF filter components: common mode choke, ferrite beads, feedthrough filter, X2 capacitor, cavity filter, ceramic coaxial resonators, thin-film filter and SAW/BAW packages

    Passive Filter Technologies Compared: LC, Ferrite, Feedthrough, Ceramic, Cavity, Microstrip, SAW and BAW

    Illustration of a thin-film capacitor stack with TiN electrodes and an ultrathin hafnium zirconium oxide ferroelectric layer on silicon

    Sub-Volt Ferroelectric HZO Capacitor Pairs Speed and Endurance

    Cut-open lithium-ion capacitor pouch cell showing stacked carbon electrodes and separators, with vials of carbon powder

    Lithium-Ion Capacitor Review Backs Hard Carbon//AC Pairing

    Rack power shelf in an AI data center with film DC-link capacitors, a supercapacitor bank and a converter board

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    Schematic of a titanium nitride thin-film inductor within a CMOS poly-resistor stack beside its integrated resonator circuit.

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    Power line EMI filter on a copper ground-plane fixture connected to a vector network analyzer with a toroidal balun

    How to Measure Filter Performance: Insertion Loss, VNA Fixtures and CM/DM Separation

    Assorted EMI and RF filter components: common mode choke, ferrite beads, feedthrough filter, X2 capacitor, cavity filter, ceramic coaxial resonators, thin-film filter and SAW/BAW packages

    Passive Filter Technologies Compared: LC, Ferrite, Feedthrough, Ceramic, Cavity, Microstrip, SAW and BAW

    Illustration of a thin-film capacitor stack with TiN electrodes and an ultrathin hafnium zirconium oxide ferroelectric layer on silicon

    Sub-Volt Ferroelectric HZO Capacitor Pairs Speed and Endurance

    Cut-open lithium-ion capacitor pouch cell showing stacked carbon electrodes and separators, with vials of carbon powder

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    Rack power shelf in an AI data center with film DC-link capacitors, a supercapacitor bank and a converter board

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    Schematic of a titanium nitride thin-film inductor within a CMOS poly-resistor stack beside its integrated resonator circuit.

    TiN Superinductors Bring Compact Cryogenic Inductance to CMOS

    Close-up of reddish-brown metallic rocks illustrating TTI MarketEYE’s connector raw material cost analysis

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UV Irradiation Improves BOPP Capacitor Film’s Breakdown Field 

20.8.2024
Reading Time: 2 mins read
A A

The Institute of Electrical Engineering of the Chinese Academy of Sciences has announced a significant breakthrough in the performance of film capacitor energy storage by using ultraviolet UV lamps irradiation in their manufacturing process.

In this breakthrough study, the excimer UV lamps nearly doubled the energy discharge density of capacitor films and increased the high-temperature “short-burst” performance by up to 52%.

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Biaxially Oriented Polypropylene (BOPP) film capacitors are widely used for energy storage: in communication equipment, medical devices, and consumer electronics to ensure efficient energy transfer and storage. They are essential in electric vehicles (EVs) and other critical applications that require short bursts of increased power.

Currently, these BOPP films experience a bottleneck at high temperatures; a critical constraint EV, and other high temperatures. By utilizing UV lamps irradiation during manufacturing, this problem is reduced significantly.

The breakthrough study utilized commercially available 172nm and 222nm ultraviolet excimer lamps developed by GMY company. These environmentally friendly lamps provide UV light with high photon energy. Primarily intended for UV curing technology GMY’s excimer UV curing technology uses 172nm UV light from the excimer lamp to break molecular bonds and promote cross-linking reactions between different monomer molecules, resulting in the functional curing of materials.

These UV lamps directly irradiated and modified BOPP in ambient air, forming better, thermally stable bonds without introducing any manufacturing issues.

The UV-modified BOPP film’s breakdown field increased by 52% at 120°C (248F). At room temperature, the energy discharge density improved from 4 MJ/m to 7.5 MJ/m, with a 17% improvement in the breakdown field.

A key element is this: applying UV to BOPP manufacture is a “soft” modification. The process doesn’t require any chemical reagents or produce high-pollution by-products. The simple addition of UV provides results with a single-step process, high throughput, and low energy consumption, and significantly improves the performance of energy storage capacitor films.

This method can be extended to other high-temperature dielectric films, demonstrating versatility according to GMY published article.

Related

Source: GMY

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