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    Bourns CSS4C-1216 four-terminal metal-strip current sense resistor for high-current Kelvin measurement

    Bourns Extends 1216 Kelvin Current Sense Resistors

    Modelithics COMPLETE+3D Library v26.3 for Ansys HFSS with RF passive component and 3D electromagnetic simulation models

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    Samtec 100-CM 1.0 mm RF Connectors Extend to 120 GHz

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    Bourns CSS4C-1216 four-terminal metal-strip current sense resistor for high-current Kelvin measurement

    Bourns Extends 1216 Kelvin Current Sense Resistors

    Modelithics COMPLETE+3D Library v26.3 for Ansys HFSS with RF passive component and 3D electromagnetic simulation models

    Modelithics COMPLETE+3D v26.3 Expands HFSS RF Models

    Samsung Electro-Mechanics low-profile and embedded MLCCs for compact PCB and power-delivery applications

    Samsung Low-Profile and Embedded MLCCs for Compact Devices

    Wk 36 Electronics Supply Chain Digest

    Bourns Adds ACXX57SQ Air Coil Inductors for RF Design

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    Samsung MLCC Options for 1 MW AI Rack Power

    Frenetic planar ER transformer simulation for a 5 kW 800 V-to-50 V PSFB converter, showing low-profile core geometry and high-current planar winding arrangement

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    Samtec 100-CM 1.0 mm vertical solderless compression-mount 50 ohm RF PCB connector

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ESD Protection Explained for Robust Electronic Systems Design

1.11.2021
Reading Time: 1 min read
A A

System Efficient ESD Design (SEED) address the protection of I/O against ESD using simulation. This allows to predict the robustness against damaging ESD and allows to reduce the likelihood of disturbances caused by ESD (soft-failure). Reduced design margin due to smaller, less current carrying metallization and contacts and thinner gate oxide has reduced the design window for ESD protection to a few V and currents of less than 2 A for high speed I/O such as USB 4.x.

This, and the need to use low capacitance devices inhibits a design by data sheet. In simulation based design models for the TVS, which include the transient turn-on and models for the IO of the IC are combined with all passive interconnect to create a model that predicts currents and voltage at the IC for different rise time and amplitude ESD pulses.

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