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    TDK Extends SMT Gate Drive Transformers to 1000 V

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    Non-Linear MLCC Class II Capacitor Measurements Challenges

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    TDK Extends SMT Gate Drive Transformers to 1000 V

    Non-Linear MLCC Class II Capacitor Measurements Challenges

    Researchers Demonstrated HfO Anti-Ferroelectric Flexible Capacitors

    Connector Industry Achieves Double-Digit Growth

    Stackpole Unveils Metal Element High Current Chip Jumpers

    Common Mistakes in Flyback Transformer Specs

    Vishay Releases Miniature SMD Trimmers for Harsh Environments

    Würth Elektronik Releases Push-Button and Main Switches

    Littelfuse Unveils High-Precision TMR Angle Magnetic Sensors

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    Non-Linear MLCC Class II Capacitor Measurements Challenges

    Percolation Phenomenon and Reliability of Molded Power Inductors in DC/DC converters

    Root Causes and Effects of DC Bias and AC in Ceramic Capacitors

    How to Calculate the Output Capacitor for a Switching Power Supply

    Switched Capacitor Converter Explained

    Understanding Inductor Dot Markings and Their Application in LTspice

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    Understanding Switched Capacitor Converters

    Coupled Inductors Circuit Model and Examples of its Applications

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ESD Protection Explained for Robust Electronic Systems Design

1.11.2021
Reading Time: 1 min read
A A

System Efficient ESD Design (SEED) address the protection of I/O against ESD using simulation. This allows to predict the robustness against damaging ESD and allows to reduce the likelihood of disturbances caused by ESD (soft-failure). Reduced design margin due to smaller, less current carrying metallization and contacts and thinner gate oxide has reduced the design window for ESD protection to a few V and currents of less than 2 A for high speed I/O such as USB 4.x.

This, and the need to use low capacitance devices inhibits a design by data sheet. In simulation based design models for the TVS, which include the transient turn-on and models for the IO of the IC are combined with all passive interconnect to create a model that predicts currents and voltage at the IC for different rise time and amplitude ESD pulses.

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