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    Assorted electronic connectors for USB, audio, video and power interfaces

    Top 10 Connector Manufacturers 2025: Amphenol Takes the Lead

    Samtec AcceleRate mP UDM6 and UDF6 board-to-board connectors with signal-contact arrays and power blades

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    Würth Elektronik WE-LHMI and WE-HCI power inductor comparison slide showing current ratings and maximum operating temperatures

    Power Inductor Selection: Ferrite vs Powder Core Trade-Offs, Würth Elektronik Webinar

    Bourns PWR163 DPAK-style surface-mount power resistor with moulded housing, metal backplate and terminals

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Kemet Hermetically Sealed Tantalum Polymer Capacitors for GaN Devices

6.8.2020
Reading Time: 1 min read
A A

Gallium Nitride semiconductors allow designers to operate at higher frequencies and voltages than their silicon counterparts, enabling power management systems that are smaller and more efficient. These new designs also require capacitors that can operate at these higher frequencies and provide stable performance at the voltages that GaN devices typically operate at.

KEMET’s polymer tantalum capacitors combine stable capacitance, high volumetric efficiency, and low ESR so designers can get the maximum benefit of gallium nitride and other wide bandgap semiconductors.

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KEMET’s T540, T541, and T543 family of polymer tantalum capacitors are designed for high reliability and space applications. They offer high frequency capacitance retention and extremely low ESR. They also require minimal voltage derating, with our polymer capacitors able to operate at up to 80% or 90% of their rated voltage while offering the same or better reliability than traditional tantalum capacitors operated at half their rated voltage.

The three series include capacitors with voltage ratings up to 63 Vdc, capacitance values from 4.7 µF to 1500 µF, and support for operating temperatures up to 125°C. Our T550 family of capacitors are a hermetically sealed variant in axial leaded and surface mount packages that offer similar performance ratings to maximize the benefits of GaN-based designs that require improved environmental resistance.

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Source: Kemet Electronics

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