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    Heraeus C5735 thick-film gold conductor circuit with fine laser-etched RF trace pattern

    Heraeus Presents Laser Etching for RF Thick-Film Gold Circuits

    YAGEO Group PMT6709NLT and PHT7249NLT GDSC SMD LLC gate-drive transformers for SiC and GaN switching applications

    YAGEO Introduces LLC Transformers for SiC and GaN Gate Drives

    bourns-crk2725-wide-terminal-current-sense-resistors

    Bourns Releases 5 W Wide-Terminal Current Sense Resistors

    TDK B3272 series boxed DC-link film capacitors with radial leads for automotive and industrial power-electronics applications

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    Knowles ATT A-Series surface-mount RF attenuator in compact ceramic thin-film package

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    YAGEO Group high-reliability polymer tantalum capacitor portfolio for aerospace and defence power electronics

    YAGEO High-Reliability Polymer Tantalum Capacitors for Aerospace

    Schematic of the step-wise LPG/LPG@MnOx/LPG-O functionally graded thick cathode for a zinc-ion hybrid capacitor, Hefei Institutes of Physical Science.

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    Isabellenhütte HFF flexible Kapton heater with etched MANGANIN foil structure and wire lead exit

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    Heraeus C5735 thick-film gold conductor circuit with fine laser-etched RF trace pattern

    Heraeus Presents Laser Etching for RF Thick-Film Gold Circuits

    YAGEO Group PMT6709NLT and PHT7249NLT GDSC SMD LLC gate-drive transformers for SiC and GaN switching applications

    YAGEO Introduces LLC Transformers for SiC and GaN Gate Drives

    bourns-crk2725-wide-terminal-current-sense-resistors

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    TDK B3272 series boxed DC-link film capacitors with radial leads for automotive and industrial power-electronics applications

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    Laser-Engineered Zinc-Ion Cathodes Target Thick Electrodes

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STMicroelectronics Introduces High-Performance GaN Family for Automotive Applications

7.5.2021
Reading Time: 2 mins read
A A

New product family to combine Power GaN with intelligence for smaller and more highly integrated system solutions for the EV era. STi2GaN offering to include solutions for On-Board Chargers, LiDAR for autonomous driving, bidirectional DC-DC converters, Class-D amplifiers, and power-conversion systems with new architecture and requirements for passive components.

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions, STi2GaN.

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STi2GaN is an innovative and unique offering combining power and intelligence in compact, high-performance solutions required by the automotive industry as it shifts to electrified platforms.

Building on ST’s leadership and strong automotive experience, innovations in Smart Power technology, wide bandgap semiconductor materials and packaging expertise, the STi2GaN family combines a monolithic power stage along with drivers and protections in GaN technology as well as System-in-Package (SiP) solutions for application-specific ICs with additional processing and control circuitry. The STi2GaN solutions use ST’s novel bond-wire-free packaging technology to provide high robustness, reliability, and performance.

“STi2GaN continues ST’s long success story in compound materials and Smart Power product innovation, targeting mainly automotive applications and the needs of high-density, high-reliability and high-power. Initial offering of STi2GaN solutions suit On-Board Chargers, LiDAR for autonomous driving, bidirectional DC-DC converters, Class-D amplifiers and power conversion systems,” said Alfio Russo, Group VP and GM Low Voltage and STi2GaN Solutions Macro Division, STMicroelectronics.

“The new product family aims to leverage the high-power density and efficiency of GaN to offer an industry-unique range of devices in 100V and 650V clusters that ensure scalability, compactness, and outstanding performance.”

Related

Source: STMicroelectronics

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