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    Heraeus C5735 thick-film gold conductor circuit with fine laser-etched RF trace pattern

    Heraeus Presents Laser Etching for RF Thick-Film Gold Circuits

    YAGEO Group PMT6709NLT and PHT7249NLT GDSC SMD LLC gate-drive transformers for SiC and GaN switching applications

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    Heraeus C5735 thick-film gold conductor circuit with fine laser-etched RF trace pattern

    Heraeus Presents Laser Etching for RF Thick-Film Gold Circuits

    YAGEO Group PMT6709NLT and PHT7249NLT GDSC SMD LLC gate-drive transformers for SiC and GaN switching applications

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Formula E Proved Optimal DC-DC isolated gate drive Supply Topology; Würth Elektronik Webinar

29.4.2021
Reading Time: 1 min read
A A

SiC-MOSFET devices are used to efficiently drive multiphase AC-Motors in industrial and E-mobility applications, amongst others, helping to achieve higher efficiency, smaller solution size and lower overall system cost. However, the optimal design of their isolated gate drive system and auxiliary supply is key to enable the SiC-MOSFET devices to unleash their top performance.

In this Webinar, we will analyze advantages and disadvantages of popular isolated DC-DC topologies used to supply the power and voltage levels that SiC-MOSFETs require for optimal operation. Along the way, we will learn how the WE-AGDT were engineered and optimized together with their reference design: an extremely compact auxiliary supply solution in Flyback topology (RD001), which is currently part of the innovative MGU05 electric powertrain of the Audi e-tron F07 car competing in the 2021 Formula-E season. Follow Würth Elektronik

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This presentation was part of our virtual conference (26-29 Apr): WE meet @ Digital Days 2021

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Source: Würth Elektronik

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