This presentation was part of our virtual conference (1-3 Dec): WE meet @ Digital Days 2020 Silicon Carbide (SiC) MOSFETs are gaining popularity in trending areas like E-mobility, renewable energy or industrial drives.
Their extremely fast switching speed helps to achieve higher efficiency, smaller size and lower system cost. However, faster switching transitions and ever higher switching frequencies pose a challenge to the gate drive system, requiring more drive power and higher CMTI capability, amongst others.
In this WEbinar, we will review key design considerations and show how the new WE-AGDT transformers from Würth Elektronik can help you overcome these challenges.
Source:
Würth Elektronik
