Passive Components Blog
No Result
View All Result
  • Home
  • News
    • All
    • Aerospace & Defence
    • Antenna
    • Applications
    • Automotive
    • Capacitors
    • Circuit Protection Devices
    • electro-mechanical news
    • Filters
    • Fuses
    • Inductors
    • Industrial
    • Integrated Passives
    • inter-connect news
    • Market & Supply Chain
    • Market Insights
    • Medical
    • Modelling and Simulation
    • New Materials & Supply
    • New Technologies
    • Non-linear Passives
    • Oscillators
    • Passive Sensors News
    • Resistors
    • RF & Microwave
    • Telecommunication
    • Weekly Digest
    Stackpole RNAN aluminium nitride thin-film chip resistors in 0603, 0805, 1206 and 2512 package sizes for precision high-power electronics

    Stackpole RNAN AlN Thin-Film Resistors Reach 6 W

    binder angled M12-A midmount panel-mount PCB connector for centric board mounting, showing compact front-facing industrial connector geometry

    binder Adds Midmount M12-A PCB Connectors for Slim Sensors

    Bourns PST065 and PST10 Series compact incremental potentiometers with hollow shafts for rotary position feedback

    Bourns Expands Compact Incremental Potentiometer Offering

    Wk 35 Electronics Supply Chain Digest

    Samsung MLCC Revenue Seen Above KRW 8T by 2027, Murata EOL Actions Reshape Supply

    ROHM SDR01 high anti-surge thick-film chip resistor in 1005 metric 0402 package with 0.33 W rated power

    ROHM Introduces Anti-Surge 0402 Resistors Rated at 0.33 W

    ECIA Industry Pulse Q3 2026 chart showing passive components, semiconductors and electro-mechanical component market sentiment and lead-time pressure

    ECIA Industry Pulse Moderates as Passive Lead Times Tighten

    LG Innotek Demonstrates FC-BGA Substrates With Embedded Silicon Capacitors for AI Power Delivery

    On-Chip 3D-Printed Copper Microinductors: A New Route to Compact RF Electronics

    Trending Tags

    • Ripple Current
    • RF
    • Leakage Current
    • Tantalum vs Ceramic
    • Snubber
    • Low ESR
    • Feedthrough
    • Derating
    • Dielectric Constant
    • New Products
    • Market Reports
  • Knowledge Blog
  • Dossiers
    • AI Hardware Dossier
    • Automotive Dossier
    • Industrial Robotics Dossier
    • Power Converter Dossier
    • Capacitor Dossier
    • Resistor Dossier
    • Inductor Dossier
    • Circuit Protection Dossier
  • Suppliers
    • Who is Who
  • PCNS
    • PCNS 2025
    • PCNS 2023
    • PCNS 2021
    • PCNS 2019
    • PCNS 2017
  • Events
  • Home
  • News
    • All
    • Aerospace & Defence
    • Antenna
    • Applications
    • Automotive
    • Capacitors
    • Circuit Protection Devices
    • electro-mechanical news
    • Filters
    • Fuses
    • Inductors
    • Industrial
    • Integrated Passives
    • inter-connect news
    • Market & Supply Chain
    • Market Insights
    • Medical
    • Modelling and Simulation
    • New Materials & Supply
    • New Technologies
    • Non-linear Passives
    • Oscillators
    • Passive Sensors News
    • Resistors
    • RF & Microwave
    • Telecommunication
    • Weekly Digest
    Stackpole RNAN aluminium nitride thin-film chip resistors in 0603, 0805, 1206 and 2512 package sizes for precision high-power electronics

    Stackpole RNAN AlN Thin-Film Resistors Reach 6 W

    binder angled M12-A midmount panel-mount PCB connector for centric board mounting, showing compact front-facing industrial connector geometry

    binder Adds Midmount M12-A PCB Connectors for Slim Sensors

    Bourns PST065 and PST10 Series compact incremental potentiometers with hollow shafts for rotary position feedback

    Bourns Expands Compact Incremental Potentiometer Offering

    Wk 35 Electronics Supply Chain Digest

    Samsung MLCC Revenue Seen Above KRW 8T by 2027, Murata EOL Actions Reshape Supply

    ROHM SDR01 high anti-surge thick-film chip resistor in 1005 metric 0402 package with 0.33 W rated power

    ROHM Introduces Anti-Surge 0402 Resistors Rated at 0.33 W

    ECIA Industry Pulse Q3 2026 chart showing passive components, semiconductors and electro-mechanical component market sentiment and lead-time pressure

    ECIA Industry Pulse Moderates as Passive Lead Times Tighten

    LG Innotek Demonstrates FC-BGA Substrates With Embedded Silicon Capacitors for AI Power Delivery

    On-Chip 3D-Printed Copper Microinductors: A New Route to Compact RF Electronics

    Trending Tags

    • Ripple Current
    • RF
    • Leakage Current
    • Tantalum vs Ceramic
    • Snubber
    • Low ESR
    • Feedthrough
    • Derating
    • Dielectric Constant
    • New Products
    • Market Reports
  • Knowledge Blog
  • Dossiers
    • AI Hardware Dossier
    • Automotive Dossier
    • Industrial Robotics Dossier
    • Power Converter Dossier
    • Capacitor Dossier
    • Resistor Dossier
    • Inductor Dossier
    • Circuit Protection Dossier
  • Suppliers
    • Who is Who
  • PCNS
    • PCNS 2025
    • PCNS 2023
    • PCNS 2021
    • PCNS 2019
    • PCNS 2017
  • Events
No Result
View All Result
Passive Components Blog
No Result
View All Result

Voltage Dependence of Ferroelectric Class 2 Multilayer Ceramic Capacitors

10.10.2025
Reading Time: 4 mins read
A A

This paper describes the physical background of the voltage-dependent capacitance of class II Multilayer Ceramic Capacitors (MLCC) and present models for this dependency. 

The paper was presented by Frank Puhane, Würth Elektronik, Germany at the 4th PCNS 10-14th September 2023, Sønderborg, Denmark as paper No.2.3.

RelatedPosts

Würth Elektronik Updates REDEXPERT DC‑DC Converter Designer

Würth Elektronik Coupled Inductors Harnessing Leakage Inductance in SEPIC, ZETA and Ćuk Converters

EMC Design Fundamentals: Safe Use of Varistors and Common Mode Chokes in Mains and Data-Line Filters

Introduction

This article focuses on the voltage dependence of class 2 Multilayer Ceramic Capacitors (MLCCs), particularly their ferroelectric properties and how these influence capacitance under DC voltage. Two main processes are examined: an immediate response due to dipole reorientation and a long-term aging effect, likely related to domain wall movement. Understanding these behaviors is crucial for accurate electronic circuit design and simulation.

Key Points

  • Class 2 MLCCs display high capacitance and low loss due to their ferroelectric materials, like barium titanate.
  • Immediate capacitance changes occur due to the fast reorientation of dipoles under DC bias.
  • Long-term capacitance decreases are attributed to slow domain wall movement and aging effects.
  • Mathematical models, like the Miller polarization model and time-dependent aging model, enable accurate simulation of voltage-dependent behaviors.
  • Design-in requires accounting for both immediate and long-term capacitance reductions.

Extended Summary

Ferroelectric class 2 MLCCs, typically made with barium titanate, exhibit spontaneous polarization due to their non-centrosymmetric crystalline structure. Below the Curie temperature, their dipoles are organized into domains that collectively respond to applied electric fields. Above the Curie temperature, this alignment is lost, resulting in paraelectric behavior.

When a DC voltage is applied, an immediate polarization process occurs as domain dipoles align with the field. This reorientation restricts dipole motion, reducing the change in charge (dq) per voltage change (dV), and thus the capacitance, expressed as C=dqdV. Hysteresis arises due to remanent polarization and coercive fields (Ec), and capacitance peaks occur when the external field matches the coercive field during polarization reversal. A suitable model for this behavior is:
C(V)=(a–CS) sechc ( (V-V_C)b ) +CS where parameters a, b, c, CS, and VC can be derived from measurements.

Over longer periods under DC bias, domain wall motion causes further capacitance reduction. This aging effect, often within 10–20% over hundreds to thousands of hours, depends on applied voltage and temperature. Two primary explanations are proposed: reorientation of 90° domains and a reduction in polarizable domain wall regions. The long-term behavior is modeled as:
Cl(t)=(C0–C∞) exp–( tτ )α +C∞ with C0 as the initial capacitance, C∞ the saturation value, τ the characteristic time, and α a form factor.

Practical measurements demonstrate that initial capacitance drop is more significant than the long-term aging effect. At lower voltages, aging becomes relatively more prominent. Design engineers should consider both processes when selecting MLCCs, accounting for operational voltage, duration, and the expected decrease in usable capacitance.

Conclusion

Understanding the immediate and long-term voltage-dependent behaviors of class 2 MLCCs is essential for reliable circuit design. Immediate effects arise from dipole reorientation, while long-term changes are linked to domain wall motion and aging. Mathematical models based on measurable physical parameters enable accurate simulations and informed component selection. To ensure performance, designers should anticipate capacitance reduction and appropriately oversize MLCCs based on operating conditions and aging characteristics.

2_3 Polarization DC Bias MLCC_PCNS_V13_GrayDownload

Related

Source: PCNS

Recent Posts

Samsung MLCC Revenue Seen Above KRW 8T by 2027, Murata EOL Actions Reshape Supply

11.9.2026
34

LG Innotek Demonstrates FC-BGA Substrates With Embedded Silicon Capacitors for AI Power Delivery

10.9.2026
36

Emerging Capacitor Markets in Fusion Energy

10.9.2026
48
onsemi solid-state transformer concept for 800 V HVDC AI data center power conversion with SiC modules, DC-link capacitors and high-frequency magnetics

Solid-State Transformers for 800 V AI Data Centers: Passive Component Design Considerations

9.9.2026
104
TDK CN series 10 µF 100 V X7R soft-termination multilayer ceramic capacitor in 3225 EIA 1210 package

TDK Releases 100 V Soft-Termination X7R MLCCs 10 uF in 3225 Package

9.9.2026
24
Overview of fabricated ferroelectric capacitors improving hyperdimensional computing task learning accuracy. a The experimental work reported in this study comprises ferroelectric capacitor (FeCAP) device fabrication, structural and electrical characterization, analog state identification and their reliability study. b The computational part of the work explores the benefits of using characteristics from the fabricated devices in a hyperdimensional computing scheme; source: authors

High-Precision Hyperdimensional Computing with Multi-Level Ferroelectric HZO Capacitors

7.9.2026
23

August 2026 Interconnect, Passives and Electromechanical Components Market Insights

4.9.2026
56

Knowles Cornell Dubilier 105C Flatpack Aluminum Electrolytic Capacitors Target Low-Profile High-Density Power Designs

4.9.2026
45

Samsung Electro-Mechanics Secures KRW 1.0722 Trillion AI Server MLCC Supply Contract

3.9.2026
76

Upcoming Events

Sep 16
17:00 - 18:00 CEST

Designing a 5 kW, 800 V-to-50 V PSFB Converter for Next-Generation Data Centers

Sep 29
16:00 - 17:00 CEST

Cybersecurity 2026

Nov 24
16:00 - 17:00 CET

Component selection with the WE REDEXPERT® DC-DC Converter Designer Tool

View Calendar

Popular Posts

  • Buck Converter Design and Calculation

    0 shares
    Share 0 Tweet 0
  • LLC Resonant Converter Design and Calculation

    0 shares
    Share 0 Tweet 0
  • Boost Converter Design and Calculation

    0 shares
    Share 0 Tweet 0
  • Flyback Converter Design and Calculation

    0 shares
    Share 0 Tweet 0
  • Earthing Systems and IEC Classification Explained

    0 shares
    Share 0 Tweet 0
  • MLCC and Ceramic Capacitors

    0 shares
    Share 0 Tweet 0
  • Resistor Symbols

    0 shares
    Share 0 Tweet 0
  • Capacitor Charging and Discharging

    0 shares
    Share 0 Tweet 0
  • Audio Capacitors: Choosing Capacitors for Crossover Circuits

    0 shares
    Share 0 Tweet 0
  • Ohm’s Law Answers Your Questions

    0 shares
    Share 0 Tweet 0

Newsletter Subscription

 

Passive Components Blog

© 2015–2026
All rights reserved

  • Home
  • Privacy Policy
  • EPCI Membership & Advertisement
  • About

No Result
View All Result
  • Home
  • Knowledge Blog
  • Dossiers
  • PCNS

© 2015–2026
All rights reserved