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Modelithics COMPLETE+3D v26.3 Expands HFSS RF Models

22.9.2026
Reading Time: 6 mins read
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Modelithics COMPLETE+3D Library v26.3 for Ansys HFSS with RF passive component and 3D electromagnetic simulation models

Modelithics has released COMPLETE+3D Library v26.3 for Ansys HFSS, adding more than 100 models representing about 650 individual devices.

The Modelithics update expands measurement-validated RF, microwave and millimetre-wave simulation coverage across passive components, 3D models and system-level blocks, with support extended through Ansys HFSS 2026 R2.

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Modelithics Qorvo GaN Library v26.5.11 Adds 200 W RF Transistor Model

Modelithics COMPLETE v26.4 Expands RF Passive Models for Keysight ADS

Modelithics CapV MVP Library: Measurement-Based Models for Varactor Chip Simulation

Key features and benefits

  • More than 100 new models covering approximately 650 individual devices
  • New 3D models for 24 Murata inductor models, plus TTM Technologies coupler and resistor models
  • New Microwave Global Models for capacitor, inductor and resistor families
  • New system-level models for amplifiers, attenuators, couplers, splitters, transformers and filters
  • Compatibility through Ansys HFSS 2026 R2
  • Measurement-validated models for circuit simulation and full-wave EM workflows

The release adds content from Kyocera-AVX, Cornell Dubilier, Murata and Knowles-Syfer for capacitors; Coilcraft, Gowanda, Murata, Piconics and Vanguard for inductors; and IMS, SOTA, TTM Technologies and Vishay for resistors. These additions matter where the selected passive component, PCB geometry and substrate properties all affect RF response.

Technical highlights

Model categoryv26.3 additionsSimulation role
3D component models24 Murata inductorsFull-wave EM analysis
3D component modelsTTM couplers and resistorsLayout-level EM analysis
Capacitor modelsKyocera-AVX, CDE, Murata, Knowles-SyferRF circuit simulation
Inductor modelsCoilcraft, Gowanda, Murata, Piconics, VanguardRF circuit simulation
Resistor modelsIMS, SOTA, TTM, VishayRF circuit simulation
System-level modelsAmplifiers, filters, couplers, splitters, transformersSignal-chain simulation

Microwave Global Models support scaling for substrate, component value and pad dimensions. This is relevant when a nominal vendor model is being applied to a different PCB stack-up, land pattern or selected component value than the original measurement fixture.

The available 3D models are substrate independent and intended for full-wave electromagnetic simulation. Their purpose is to capture interactions between components and nearby PCB structures that may be missed by an equivalent-circuit-only workflow.

Typical applications

The new library content supports RF and microwave circuit and subsystem work where parasitics, layout and coupling can materially affect the result.

  • Lumped-element filters: Capacitor, inductor and resistor models support circuit optimisation before layout and full-wave verification.
  • RF matching networks: Part-value- and substrate-scalable models help evaluate tuning sensitivity when the final PCB geometry differs from the initial reference design.
  • Dense RF PCB layouts: The 3D models support analysis of component-to-component coupling, coupling to adjacent traces and shielding effects.
  • Microwave signal chains: New amplifier, attenuator, coupler, splitter, transformer and filter models extend coverage beyond individual passive parts.
  • High-frequency power and bias networks: Accurate passive models help assess resonances caused by package parasitics, mounting pads and interconnect geometry.

The library update is especially relevant to engineers using RF inductors and their high-frequency behaviour as part of impedance matching, filtering or bias networks, where inductance, self-resonance and mounting configuration must be evaluated in the frequency domain.

Application fit

Design situationRelevant library capabilityValidation focus
Closely spaced SMD passives3D component modelsCoupling and field interaction
Alternate PCB materialsSubstrate scalingDielectric properties and thickness
Land-pattern changesPad-dimension scalingReference planes and pad parasitics
Value optimisationPart-value scalingModel validity range
RF module integrationSystem-level modelsInterfaces and operating band
Final layout releaseHFSS EM co-simulationCorrelation with hardware

Modelithics Application Note 063 shows why proximity effects can become important in compact RF layouts. Its example uses capacitors in a shunt structure, where reducing spacing changes the measured resonance behaviour; the 3D simulation tracks that effect more closely than circuit simulation alone.

The application note also describes a 3D “brick model” approach for capacitor co-simulation. It combines a simplified component geometry in the electromagnetic model with a Microwave Global Model in the circuit domain, allowing capacitance values to be changed without repeating the full 3D run. This method has been validated for capacitor simulations, not as a general substitute for all component types.

Design-in notes for engineers

  • Check the individual model datasheet for its valid frequency range, test conditions, fixture details and model-to-measurement comparison before using it in a release design.
  • Confirm that the selected component value, package, substrate definition and pad geometry are inside the parameters supported by the model.
  • Use circuit models for early optimisation, then reserve computationally intensive 3D simulation for locations where coupling, shielding, package geometry or dense placement can change performance.
  • Establish port definitions, reference planes, mesh convergence and sweep settings carefully; these can affect HFSS results independently of component-model accuracy.
  • Correlate critical simulated responses with representative hardware measurements before production release. This does not replace system-level validation, including manufacturing tolerances and actual board-material variation.
  • For MLCC networks, verify the underlying production component characteristics separately. The simulation model does not remove the need to assess DC-bias dependence, temperature response, ageing and mechanical-stress sensitivity in the final application.

Further reading

  • Modelithics Library for MATLAB Delivers Measurement-Based RF and Microwave Models
  • Modelithics Releases COMPLETE Library v26.2 for Keysight Genesys
  • Modelithics COMPLETE v26.4 Expands RF Passive Models for Keysight ADS
  • Spectrum Control Powerfilm RF Models Join Modelithics Library

Source

This information is based on the Modelithics press release and official Modelithics library documentation. Engineers should consult the current manufacturer documentation and the model-specific datasheet for final model selection, simulation setup, qualification and design release.

References

  1. Modelithics Releases COMPLETE+3D Library v26.3 for Ansys HFSS
  2. Modelithics COMPLETE+3D Library for Ansys HFSS datasheet
  3. Modelithics COMPLETE Library
  4. Application Note 063: Introduction to Modelithics 3D Models in HFSS

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